Date:- 4 Sep, 2015 Data Sheet Issue:- A1
Advance data
Insulated Gate Bi-Polar Transistor Type T0570VD25G
Absolute Maxi...
Date:- 4 Sep, 2015 Data Sheet Issue:- A1
Advance data
Insulated Gate Bi-Polar
Transistor Type T0570VD25G
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage
MAXIMUM LIMITS
2500
1250
±20
UNITS
V V V
IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 750nH. 4) Half-sinewave, 125°C Tj initial.
MAXIMUM LIMITS
570 1140 570 1140 ...
