DatasheetsPDF.com

T0960VC17G Dataheets PDF



Part Number T0960VC17G
Manufacturers IXYS
Logo IXYS
Description Insulated Gate Bi-Polar Transistor
Datasheet T0960VC17G DatasheetT0960VC17G Datasheet (PDF)

Date:- 30 Nov, 2016 Data Sheet Issue:- P1 Tentative data Insulated Gate Bi-Polar Transistor Type T0960VC17G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 1700 900 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetit.

  T0960VC17G   T0960VC17G


Document
Date:- 30 Nov, 2016 Data Sheet Issue:- P1 Tentative data Insulated Gate Bi-Polar Transistor Type T0960VC17G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 1700 900 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range. Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 150nH. 4) Half-sinewave, 125°C Tj initial. MAXIMUM LIMITS 960 1920 960 192.


T0900DF65A T0960VC17G T1200TD25A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)