2N6033

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices 2N6032 2N6033 TECHNICAL DATA Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current Total Power Dissipation @ TC = +250C (1) VCEO VCBO IC VEBO IB PT 90 120 120 150 50 40 7.0 10 140 Operating & Storage Temperature Range THERMAL CHARACTERISTICS Top, Tstg -65 to +200 Characteristics Symbol Max. Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C between TC = 250C and TC = 2000C 1.25 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6032 2N6033 V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6032 2N6033 V(BR)CER Collector-Emitter Breakdown Voltage IC = 200 mAdc, VEB = 1.5 Vdc 2N6032 2N6033 V(BR)CEX Collector-Base Cutoff Current V...