2N6277

SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 High VCEO. High DC Current Gain, hFE. Low Collector-Emitter Saturation Voltage, VCE(sat). Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 180V VCEO Collector – Emitter Voltage 150V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 50A ICM Peak Collector Current 100A IB Base Current 20A PD Total Power Dissipation at TC = 25°C 250W Derate Above 25°C 1.43W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.7 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information fu...