2SC4097

Silicon Epitaxial Planar Transistor FEATURES z Excellent hFE linearity. z Power dissipation:PCM=200mW Pb Lead-free Production specification 2SC4097 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking 2SC4097 CP/CQ/CR SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 32 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 500 ICM Peak Collector Current 500 IBM Peak Base Current 10 PC Collector Dissipation 250 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mA mA mW ℃ F003 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Transistor 2SC4097 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emit...