Document
NPN Silicon Epitaxial Planar Transistor
EATURES
z High Collector Current.(IC= 500mA) z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PT=200mW)
Pb
Lead-free
APPLICATIONS
z High Collector Current.
Production specification
S9013W
ORDERING INFORMATION
Type No.
Marking
S9013W
J3
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
40
VCEO
Collector-Emitter Voltage
25
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
500
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
F011 Rev.A
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Production specification
NPN Silicon Epitaxial Planar Transistor
S9013W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
40
V
Collector-emitter breakdown volt.