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S9013W Dataheets PDF



Part Number S9013W
Manufacturers GME
Logo GME
Description NPN Transistor
Datasheet S9013W DatasheetS9013W Datasheet (PDF)

NPN Silicon Epitaxial Planar Transistor EATURES z High Collector Current.(IC= 500mA) z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PT=200mW) Pb Lead-free APPLICATIONS z High Collector Current. Production specification S9013W ORDERING INFORMATION Type No. Marking S9013W J3 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 25 VEBO Emit.

  S9013W   S9013W


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NPN Silicon Epitaxial Planar Transistor EATURES z High Collector Current.(IC= 500mA) z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PT=200mW) Pb Lead-free APPLICATIONS z High Collector Current. Production specification S9013W ORDERING INFORMATION Type No. Marking S9013W J3 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 500 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F011 Rev.A www.gmicroelec.com 1 Production specification NPN Silicon Epitaxial Planar Transistor S9013W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown volt.


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