BC808W

BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching applications These transistors are subdivided into three groups –16, -25, -40 according to their current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage HEmitter Base Voltage BC807W BC808W BC807W BC808W CCollector Current Peak Collector Current EPeak Base Current Power Dissipation TThermal Resistance , Junction to Ambient Junction Temperature MStorage Temperature Range SE1) Transistor mounted on an FR4 printed-circuit board. Symbol -VCBO -VCEO -VEBO -IC -ICM -IBM Ptot RθJA TJ Tstg Value 50 30 45 25 5 500 1 200 200 625 1) 150 -65 to +150 Unit V V V mA A mA mW K/W OC OC SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 23/02/2006 BC807W / BC808W Characteristics at Tamb = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 500 mA -1...