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BC857W

JCET

PNP Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856W BC857W BC858W TRANSIS...


JCET

BC857W

File Download Download BC857W Datasheet


Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856W BC857W BC858W TRANSISTOR (PNP) SOT-323 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Tstg Parameter Collector-Base Voltage BC856W BC857W BC858W Collector-Emitter Voltage BC856W BC857W BC858W Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -50 -30 -65 -45 -30 -5 -0.1 150 150 -65-150 Unit V V V A mW ℃ ℃ DEVICE MARKING BC856AW= 3A; BC856BW= 3B; BC857AW=3E; BC857BW=3F;BC857CW=3G; BC858AW=3J; BC858BW=3K; BC858CW=3L B,Aug,2013 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage BC856W BC857W BC858W BC856W BC857W B...




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