NPN General Purpose Transistors
MMBT2222AW=P1
VCEO
MMBT2222AW
Value
3
1 2
SOT-323(SC-70)
TJ ,Tstg
150
833 -55 to+150
(1)
1. Pulse Test: Pulse Wi...
Description
MMBT2222AW=P1
VCEO
MMBT2222AW
Value
3
1 2
SOT-323(SC-70)
TJ ,Tstg
150
833 -55 to+150
(1)
1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0%
u
WEITRON
http://www.weitron.com.tw
MMBT2222AW
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
ON CHARACTERISTICS(1)
DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc) (IC=1.0 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc) (IC=150mAdc, VCE=10 Vdc) (IC=500 mAdc, VCE=10 Vdc)
Collector-Emitter Saturation Voltage (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc)
hFE
VCE(sat) VBE(sat)
35 50 75 100 40
-
0.6 -
300 -
0.3 1.0
1.2 2.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (IC=20 mAdc, VCE=20 Vdc, f=100MHz)
Output Capacitance (VCB=10 Vdc, IE=0, f=1.0MHz)
Input Capacitance (VEB=0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)
Voltage Feeback Radio (IC=10 mAdc, VCE=10 V...
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