Power Transistor. MMBT2222AW Datasheet

MMBT2222AW Datasheet PDF, Equivalent


Part Number

MMBT2222AW

Description

NPN Silicon Epitaxial Planar Medium Power Transistor

Manufacture

CHINA BASE

Total Page 5 Pages
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MMBT2222AW Datasheet
MMBT2222W / MMBT2222AW
NPN Silicon Epitaxial Planar Medium Power Transistor
for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
MMBT2222W MMBT2222AW
60 75
30 40
56
600
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Page 1 of 5
3/17/2014

MMBT2222AW Datasheet
MMBT2222W / MMBT2222AW
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 10 V, IC = 0.1 mA
at VCE = 10 V, IC = 1 mA
at VCE = 10 V, IC = 10 mA
at VCE = 1 V, IC = 150 mA
at VCE = 10 V, IC = 150 mA
at VCE = 10 V, IC = 500 mA
Collector Base Voltage
at IC = 10 µA
MMBT2222W
MMBT2222AW
MMBT2222W
MMBT2222AW
Collector Emitter Voltage
at IC = 10 mA
MMBT2222W
MMBT2222AW
Emitter Base Voltage
at IE = 10 µA
MMBT2222W
MMBT2222AW
Collector Base Cutoff Current
at VCB = 50 V
at VCB = 60 V
Emitter Base Cutoff Current
at VEB = 3 V
Collector Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
MMBT2222W
MMBT2222AW
MMBT2222W
MMBT2222AW
MMBT2222W
MMBT2222AW
Base Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
MMBT2222W
MMBT2222AW
MMBT2222W
MMBT2222AW
Transition Frequency
at VCE = 20 V, -IE = 20 mA, f = 100 MHz
Collector Output Capacitance
at VCB = 10 V, f = 100 KHz
Emitter Input Capacitance
at VEB = 0.5 V, f = 100 KHz
Delay Time
at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA
Rise Time
at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA
Storage Time
at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA
Fall Time
at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA
Symbol
hFE
hFE
hFE
hFE
hFE
hFE
hFE
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
Cob
Cib
td
tr
tstg
tf
Min.
35
50
75
50
100
30
40
60
75
30
40
5
6
-
-
-
-
-
-
-
-
0.6
-
-
300
-
-
-
-
-
-
Max.
-
-
-
-
300
-
-
-
-
-
-
-
-
100
100
100
0.4
0.3
1.6
1
1.3
1.2
2.6
2
-
8
25
10
25
225
60
Unit
-
-
-
-
-
-
-
V
V
V
nA
nA
V
V
MHz
pF
pF
ns
ns
ns
ns
Page 2 of 5
3/17/2014


Features Datasheet pdf MMBT2222W / MMBT2222AW NPN Silicon Epita xial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) P arameter Collector Base Voltage Collect or Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipat ion Junction Temperature Storage Temper ature Range Symbol VCBO VCEO VEBO IC P tot Tj Tstg Value MMBT2222W MMBT2222AW 60 75 30 40 56 600 200 150 - 55 to + 1 50 Unit V V V mA mW OC OC Page 1 of 5 3/17/2014 MMBT2222W / MMBT2222AW Ch aracteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 1 0 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA Collector Base Voltag e at IC = 10 µA MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW Collector Emitter Voltage at IC = 10 mA MMBT2222W MMBT2 222AW Emitter Base Voltage at IE = 10 µA MMBT2222W MMBT2222AW Collector Ba se Cutoff Current at VCB = 50 V at VCB = 60 V Emitter Base Cuto.
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