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MMBT2907AW Dataheets PDF



Part Number MMBT2907AW
Manufacturers JR Electronics
Logo JR Electronics
Description PNP Transistor
Datasheet MMBT2907AW DatasheetMMBT2907AW Datasheet (PDF)

MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage MMBT2907W MMBT2907AW Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 60 40 60 5 600 200 150 - 55 to + 150 Unit V V V mA mW OC OC ShangHai JR Electronics.CO.,LTD. ht.

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MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage MMBT2907W MMBT2907AW Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 60 40 60 5 600 200 150 - 55 to + 150 Unit V V V mA mW OC OC ShangHai JR Electronics.CO.,LTD. http://www.jrdz.net.cn MMBT2907W / MMBT2907AW Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 0.1 mA at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 10 V, -IC = 150 mA at -VCE = 10 V, -IC = 500 mA MMBT2907W MMBT2907AW MMBT2907W MMBT2907AW MMBT2907W MMBT2907AW MMBT2907W MMBT2907AW Collector Base Cutoff Current at -VCB = 50 V Collector Emitter Cutoff Current at -VCE = 30 V Emitter Base Cutoff Current at -VEB = 3 V Collector Base Breakdown Volta.


MMBT2907W MMBT2907AW MMBT2907W


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