MMBT4401W

MMBT4401W NPN Silicon General Purpose Transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Collector Cutoff Current at VCB = 35 V Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 0.1 mA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 0.1 mA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz Collector Base Capacitance at VCB = 5 V, IE = 0, f = 1 MHz Symbol VCBO VCEO VEBO IC Ptot TJ Ts V...