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MMBTA42W Dataheets PDF



Part Number MMBTA42W
Manufacturers SeCoS
Logo SeCoS
Description NPN Silicon Plastic-Encapsulate Transistor
Datasheet MMBTA42W DatasheetMMBTA42W Datasheet (PDF)

Elektronische Bauelemente MMBTA42W NPN Silicon General Purpose Transistor FEATURES · Plastic-Encapsulate Transistors · Power dissipation & Collector current Pcm: 0.2W Icm: 0.3A · High voltage V(BR): 300V 2. Base 3. Collector 1.Emitter RoHS Compliant Product A L Top View BS VG C D HK SOT-323 Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 J L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm č ¥ ĎELEC.

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Elektronische Bauelemente MMBTA42W NPN Silicon General Purpose Transistor FEATURES · Plastic-Encapsulate Transistors · Power dissipation & Collector current Pcm: 0.2W Icm: 0.3A · High voltage V(BR): 300V 2. Base 3. Collector 1.Emitter RoHS Compliant Product A L Top View BS VG C D HK SOT-323 Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 J L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm č ¥ ĎELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 300 Collector-emitter breakdown voltage V(BR)CEO Ic= 1 m A IB=0 300 Emitter-base breakdown voltage V(BR)EBO IE= 100 A IC=0 5 Collector cut-off current ICBO VCB=200 V , IE=0 Emitter cut-off current IEBO HFE 1 VEB= 5V , IC=0 VCE= 10V, IC= 1mA 60 DC current gain HFE 2 VCE= 10V, IC=10mA 100 HFE 3 VCE=10V, IC=30mA 70 C.


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