Document
Elektronische Bauelemente
MMBTA42W
NPN Silicon
General Purpose Transistor
FEATURES
· Plastic-Encapsulate Transistors · Power dissipation & Collector current
Pcm: 0.2W Icm: 0.3A
· High voltage V(BR): 300V
2. Base
3. Collector 1.Emitter
RoHS Compliant Product
A L
Top View
BS
VG
C D HK
SOT-323 Dim Min Max
A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 J L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm
č ¥ ĎELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
300
Collector-emitter breakdown voltage
V(BR)CEO Ic= 1 m A IB=0
300
Emitter-base breakdown voltage
V(BR)EBO IE= 100 A IC=0
5
Collector cut-off current
ICBO VCB=200 V , IE=0
Emitter cut-off current
IEBO HFE 1
VEB= 5V , IC=0 VCE= 10V, IC= 1mA
60
DC current gain
HFE 2
VCE= 10V, IC=10mA
100
HFE 3
VCE=10V, IC=30mA
70
C.