Document
MMBTA42W
NPN Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Symbol
SOT-323 Plastic Package
Value
Unit
Collector Base Voltage
VCBO
300
V
Collector Emitter Voltage
VCEO
300
V
Emitter Base Voltage
VEBO
6
V
Collector Current Power Dissipation Junction and Storage Temperature Range
Characteristics at Ta = 25 OC
HParameter
DC Current Gain at VCE = 10 V, IC = 1 mA
Cat VCE = 10 V, IC = 10 mA
at VCE = 10 V, IC = 30 mA Collector Base Cutoff Current
Eat VCB= 200 V
Emitter Base Cutoff Current
Tat VEB= 6 V
Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage
Mat IC= 1 mA
Emitter Base Breakdown Voltage
Eat IE= 100 µA
Collector Emitter Saturation Voltage
Sat IC = 20 mA, IB = 2 mA
IC Ptot Tj, Tstg
500 200 - 55 to + 150
mA mW OC
Symbol
hFE hFE hFE ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
Min.
25 80 40 -
-
300
300
6
-
Max.
200
0.1
0.1
-
-
-
0.5
Unit
µA
.