Elektronische Bauelemente
MMBTA92W
PNP Silicon
General Purpose Transistor
FEATURES
n RoHS Compliant Product n Power di...
Elektronische Bauelemente
MMBTA92W
PNP Silicon
General Purpose
Transistor
FEATURES
n RoHS Compliant Product n Power dissipation & Collector current n Pcm: 0.2W Icm: -0.3A n High voltage V(BR): -300V
2. Base
3. Collector 1.Emitter
A L
Top View
BS
VG
C D HK
SOT-323 Dim Min Max
A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 J L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm
č ¥ ĎELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CBO Ic= -100uA IE=0 V(BR)CEO Ic= -1 m A IB=0
V(BR)EBO IE= -100XA IC=0
-300 -300 -5
V V V
Collector cut-off current
ICBO VCB=-200 V , IE=0
-0.25
A
Emitter cut-off current
IEBO HFE 1
VEB= -5V , IC=0 VCE= -10V, IC= - 1mA
60
-0.1
A
DC current gain
HFE 2 HFE 3
VCE= -10V, IC=-10mA VCE=-10V, IC=-30mA...
