MMBTA92W

MMBTA92W PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 300 V Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature HStorage Temperature Range CCharacteristics at Ta = 25 OC Parameter DC Current Gain Eat -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA Tat -VCE = 10 V, -IC = 30 mA Collector Base Cutoff Current at -VCB = 200 V Emitter Base Cutoff Current Mat -VEB= 3 V Collector Base Breakdown Voltage at -IC = 100 µA ECollector Emitter Breakdown Voltage Sat -IC= 1 mA -VCEO -VEBO -IC Ptot Tj Tstg 300 5 500 200 150 - 55 to + 150 V V mA mW OC OC Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO Min. 25 40 25 - - 300 300 Max. 250 100 - - Unit nA nA V V Emitter Base Breakdown Voltage at -IE = 100 µA -V(BR)EBO 5 - V Collector Emitter Saturation Voltage at -IC = 20 mA, -IB...