Silicon Epitaxial Planar Transistor
FEATURES
z High Collector Current.(IC= 500mA). z Complementary To S8550W. z Excelle...
Silicon Epitaxial Planar
Transistor
FEATURES
z High Collector Current.(IC= 500mA). z Complementary To S8550W. z Excellent HFE Linearity.
Pb
Lead-free
APPLICATIONS
z High Collector Current.
ORDERING INFORMATION
Type No.
Marking
S8050W
J3Y
Production specification
S8050W
SOT-323 Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC PC Tj,Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature
40 25 5 500 300 -55 to +150
Units V V V mA mW ℃
F095 Rev.A
www.gmicroelec.com 1
Production specification
Silicon Epitaxial Planar
Transistor
S8050W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CBO V(BR)CEO V(BR)EBO
IC=100μA,IE=0 IC=1mA,IB=...
