2SA1213

Silicon Planar Epitaxial Transistor FEATURES z Low saturation voltage z High speed switching time Pb Lead-free z Small flat package z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary to 2SC2873 Production specification 2SA1213 ORDERING INFORMATION Type No. Marking 2SA1213 NO/NY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) -50 -50 -5 -2 -0.4 500 1000(Note1) -55 to +150 Units V V V A A mW ℃ E040 Rev.A www.gmicroelec.com 1 Production specification Silicon Planar Epitaxial Transistor 2SA1213 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC=-1...