Plastic-Encapsulate Transistors
FEATURES
• Low saturation voltage • Excellent DC current gain characteristics • Complem...
Plastic-Encapsulate
Transistors
FEATURES
Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-50
VCEO
-50
VEBO
-6
IC -2
PC 0.5
TJ 150
Tstg -55to +150
Unit
V V V A W
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=-50μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=-50μA, IC=0
Collector cut-off current
ICBO VCB=-50V, IE=0
Emitter cut-off current
IEBO VEB=-5V, IC=0
DC current gain
hFE VCE=-2V, IC=-500mA
Collector-emitter saturation voltage
VCE(sat) IC=-1A, IB=-50mA
Transition frequency
fT VCE=-2V, IC=-0.5A, f=100MHz
C...