2SB1132

DATA SHEET 2SB1132 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -32 Volts CURRENT -1.0 Ampere FEATURES z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z HIGH DC CURRENT GAIN z LOW COLLECTOR-EMITTER SATURATION VOLTAGE .181 (4.6) .173( 4.4) .061 (1.55)REF. 0.063 (1.6 ) 0.055 (145 ) .1 6 7( 4. 2 5) . 15 5 (3 .9 4 ) . 10 2 (2 .6 ) .0 91 (2 .3) 1. 2 0 .9 MECHANICAL DATA z CASE：SOT-89,PLASTIC z TERMINALS：SOLDERABLE PER MIL-STD-202, METHOD 208 z APPROX. WEIGHT:0.002 GRAMS .023(0.58) .016(0.40) .020(0.52) .013(0.32) .060(1.5)TYP. .118(3.0)TYP. .017(0.44) .014(0.35) CASE：SOT-89 DIMENSIONS IN INCHES (MILLIMETERS) MAXIMUM RATINGS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED. PARAMETER SYMBOL COLLECTOR-EMITTER VOLTAGE VCEO COLLECTOR-BASE VOLTAGE VCBO EMITTER-BASE VOLTAGE VEBO COLLECTOR CURRENT-CONTINUOUS IC COLLECTOR POWER DISSIPATION PC JUNCTION AND STORAGE TEMPERATURE RANGE TJ,TSTG NOTE: 1. INDICATES DATA IN ADDI...