JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1132 TRANSISTOR (PNP)
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate
Transistors
2SB1132
TRANSISTOR (
PNP)
FEATURES z Low VCE(sat) z Compliments 2SD1664
SOT-89-3L
1. BASE 2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. EMITTER
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Continuous Collector Current
ICP
Pulsed Collector Current
PC Collector Power Dissipation
TJ Junction Temperature
Tstg Storage Temperature
Value -40 -32 -5 -1
-2 500 150 -55~150
Unit V V V A
A mW
℃
℃
6LQJOHSXOVH,3: PV
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
1 2 3
Parameter Collector-base breakdown voltage
Symbol Test conditions V(BR)CBO IC=-50μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-50μA,IC=0
Collector cut-off current
ICBO
VCB=-20V,IE=0
Emitter cut-off current
IEBO VEB=-4V,IC=0
DC cu...
