2SB1238

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter-base voltage VEBO −5 Collector current IC −0.7 Collector power dissipation 2SB1189 2SB1238 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. Unit V V V A W ∗1 ∗2 °C °C Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) ∗Denotes hFE 2SB1189 MPT3 QR BD∗ T100 1000 2SB1238 ATV QR − TV2 2500 Dimensions (Unit : mm) 2SB1189 4.0 1.0 2.5 0.5 (1) (2) (3) 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 ROHM : MPT3 EIAJ : SC-62 2SB1238 ...