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2SB1260

PNP Transistor

Description

Plastic-Encapsulate Transistors FEATURES High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junc...

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