Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A...
Production specification
PNP Silicon Epitaxial Planar
Transistor
FEATURES
z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A).
Pb
Lead-free
z Excellent DC current gain characteristics.
z Complementary: 2SD2098.
2SB1386
APPLICATIONS
z Low frequency
transistor.
ORDERING INFORMATION
Type No.
Marking
2SB1386
BHP/BHQ/BHR
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
-30 -20
VEBO IC PC RθJA
Emitter-Base Voltage Collector Current
Collector Dissipation
-6
DC -5 Pulse -10
500
Thermal Resistance,,Junction-to- Ambient 300
RθJC
Thermal Resistance,Junction -to-Case
80
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V A mW ℃/W ℃/W ℃
E024 Rev.A
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Production specification
PNP Silicon Epitaxial Planar
Transistor
2SB1386
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test condition...