SMD Type
PNP Transistors 2SB1386-HF
Transistors
Features
Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A)...
SMD Type
PNP Transistors 2SB1386-HF
Transistors
Features
Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type
PNP silicon
transistor ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms
Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg
Rating -30 -20 -6 -5 -10 0.5 150
-55 to +150
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Transition frequency
Symbol
Test Conditions
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