2SB1386

Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage, Execllent current-to-gain characteristics 2SB1386 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -30 VCEO -20 VEBO -6 IC -5 PC 0.5 TJ 150 Tstg -55to +150 Unit V V V A W ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol unless otherwise specified) Test conditions Collector-base breakdown voltage VCBO IC=-50μA,IE=0 Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 Emitter-base breakdown voltage VEBO IE=-50μA,IC=0 Collector cut-off current ICBO VCB=-20V,IE=0 Emitter cut-off current IEBO VEB=-5V,IC=0 DC current gain hFE VCE=-2V,IC=-500mA Collector-emitter saturation voltage VCE(sat) IC=-4A,IB=-100mA Transition frequency fT VCE=-6V,IC=-50mA,f=30MHz Collector out...