2SB766A

2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1 A Collector Power dissipation PC 500 mW Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55-150 ℃ 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -60 - -V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -50 - -V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 - -V Collector cut-off current ICBO VCB=-20V, IE=0 - - -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 - - -0.1 μA DC current gain hFE1 VCE=-10V, IC=-500mA 85 - 340 DC current gain hFE2 VCE=-5V, IC=-...