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2SB798 Dataheets PDF



Part Number 2SB798
Manufacturers GME
Logo GME
Description PNP Epitaxial Planar Silicon Transistors
Datasheet 2SB798 Datasheet2SB798 Datasheet (PDF)

PNP Epitaxial Planar Silicon Transistors FEATURES z Low collector-emitter saturation Pb Lead-free voltage VCE(sat).<-0.4V(IC=-0.1A,IB=-100mA) z Excellent DC Current Gain Linearity: HFE=100 TYP.(VCE=-1.0V IC=-0.1 Production specification 2SB798 ORDERING INFORMATION Type No. Marking 2SB798 KR/KQ/KP SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-B.

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PNP Epitaxial Planar Silicon Transistors FEATURES z Low collector-emitter saturation Pb Lead-free voltage VCE(sat).<-0.4V(IC=-0.1A,IB=-100mA) z Excellent DC Current Gain Linearity: HFE=100 TYP.(VCE=-1.0V IC=-0.1 Production specification 2SB798 ORDERING INFORMATION Type No. Marking 2SB798 KR/KQ/KP SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Pulse(Note1) -30 V -25 V -5.0 V -1.0 A -1.5 A PC Collector Dissipation(Note2) 2W Tj,Tstg Junction and Storage Temperature -55 to +150 Note: 1. PW≤10ms,Duty Cycle≤50%; 2.When mounted on a ceramic substrate of 16cm2*0.7mm; ℃ E148 Rev.A www.gmicroelec.com 1 Production specification PNP Epitaxial Planar Silicon Transistors 2SB798 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX .


2SB798 2SB798 2SC1623T


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