2SD965-Q

SMD Type TransistIoCrs NPN Silicon Epitaxial Transistors 2SD965-Q ■ Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low-voltage power supply. SOT-89 4.50±0.1 1.80±0.1 123 0.48±0.1 0.53±0.1 2.50±0.1 4.00±0.1 Unit:mm 1.50 ±0.1 0.44±0.1 0.80±0.1 2.60±0.1 0.40±0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 3.00±0.1 Rating 40 20 5 5 0.5 150 -55 to +150 Unit V V V A W ℃ ℃ 1.Base 2.Collector 3.Emitter ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC current gain Collector-emitter saturation voltage Collector output capacitan...