SMD Type
Transistors
NPN Medium Power Transistor BC868
Features
High current Two current gain selections 1.2 W total ...
SMD Type
Transistors
NPN Medium Power
Transistor BC868
Features
High current Two current gain selections 1.2 W total power dissipation.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage (open emitter)
VCBO
32
V
Collector-emitter voltage (open base)
VCEO
20
V
Emitter-base voltage (open collector)
VEBO
5
V
Collector current
IC 1 A
Peak collector current
ICM 2
A
Peak base current
IBM 200 mA
Total power dissipation
*1 and *2
0.5 W
*1 and *3
Ptot 0.85
W
*1 and *4
1.2 W
Storage temperature
Tstg -65 to +150
Junction temperature
Tj 150
ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient *1 and *2
Rth(j-a)
250
K/W
*1 and *3
147 K/W
*1 and *4
104 K/W
Thermal resistance from junction to solder point
Rth(j-s)
20
K/W
*1.Refer to SOT89 standard mounting conditions.
*2.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
*3.Device mounted on an...
