Document
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - OCTOBER 1995 FEATURES
7
* SUITABLE FOR GENERAL AF APPLICATIONS AND
CLASS B AUDIO OUTPUT STAGES UPTO 3W
* HIGH hFE AND LOW SATURATION VOLTAGE
BC868
C
COMPLEMENTARY TYPE - BC869
PARTMARKING DETAILS–
BC868 - CAC BC868-16 - CCC BC868-25 - CDC
C B
SOT89
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
25 V
Collector-Emitter Voltage
VCEO
20 V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 2 A
Continuous Collector Current
IC
1A
Power Dissipation at Tamb=25°C
Ptot
1W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage
V(BR)CBO
25
V IC=100µA
Collector-Emitter Breakdown Voltage
V(BR)CEO
20
V IC=10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
5
V IE=10µA
Collector Cut-Off Current
Emi.