KTC4375

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC4375 TRANSISTOR (NPN) FEATURES Low voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 5 1.5 0.5 150 -55~150 Unit V V V A W ℃ ℃ SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=1mA,IE=0 V(BR)CEO IC=10mA,IB=0 V(BR)EBO IE=1mA,IC=0 ICBO VCB=30V,IE=0 IEBO VEB=5V,IC=0 hFE ...