MMBT2222AT

Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available (MMBT2907AT). z Collector Current Capability Ic=600mA. z Ultra-small surface mount package. Pb Lead-free MMBT2222AT APPLICATIONS z General switching and amplification. ORDERING INFORMATION Type No. Marking MMBT2222AT 1P SOT-523 Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER MMBT3904T VCBO collector-base voltage 75 VCEO collector-emitter voltage 40 VEBO emitter-base voltage 6 IC collector current (DC) 600 Pd Power dissipation 150 RθJA Thermal resistance, junction to Ambient 833 Tstg storage temperature range -55 to +150 Tj junction temperature 150 UNIT V V V mA mW °C/W °C °C H020 Rev.A www.gmicroelec.com 1 Production specification NPN SWITCHING TRANSISTOR MMBT2222AT ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX. ...