MMBT3904T

Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available (MMBT3906T). z Collector Current Capability Ic=200mA. z Collector-emitter Voltage VCEO=40V. Pb Lead-free MMBT3904T APPLICATIONS z General switching and amplification. ORDERING INFORMATION Type No. Marking MMBT3904T 1N SOT-523 Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER MMBT3904T VCBO collector-base voltage 60 VCEO collector-emitter voltage 40 VEBO emitter-base voltage 6 IC collector current (DC) 200 Pd Power dissipation 150 RθJA Thermal resistance, junction to Ambient 833 Tstg storage temperature range -50 to +150 Tj junction temperature 150 UNIT V V V mA mW °C/W °C °C H014 Rev.A www.gmicroelec.com 1 Production specification NPN SWITCHING TRANSISTOR MMBT3904T ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX. UNI...