NPN transistor. 2N2222 Datasheet

2N2222 transistor. Datasheet pdf. Equivalent

Part 2N2222
Description Silicon NPN transistor
Feature 2N2222 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Pl.
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download 2N2222 Datasheet



2N2222
2N2222
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
小功率表面贴片封装应用。
low power surface mount applications.
用途 / Applications
用于一般放大。
General amplifier.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Collector
PIN 2Base PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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2N2222
2N2222
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
60
30
5.0
600
625
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-On Time
Turn-Off Time
符号
Symbol
VCBO
测试条件
Test Conditions
IC=10μA
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
60 V
VCEO IE=10mA
IB=0
30
V
VEBO IE=10μA
IC=0
ICBO
IEBO
hFE
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)(1)
VBE(sat)(2)
fT
Cob
Ton
Toff
VCB=50V IE=0
VEB=5.0V IC=0
VCE=10V IC=150mA
IC=150mA IB=15mA
IC=500mA IB=50mA
IC=150mA IB=15mA
IC=500mA IB=50mA
VCE=20V IC=20mA
f=100MHz
VCB=10V IE=0
f=1.0MHz
VCC=30V VBE=0.5V
IC=150mA IB1=15mA
VCC=30V IC=150mA
IB1=IB2=15mA
5.0
100
250
V
0.01 μA
0.1 μA
300
0.4 V
1.6 V
1.3 V
2.6 V
MHz
8.0 pF
35 ns
285 ns
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