PNP transistor. 2N2907 Datasheet

2N2907 transistor. Datasheet pdf. Equivalent

Part 2N2907
Description Silicon PNP transistor
Feature 2N2907 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 PNP 。Silicon PNP transistor in a TO-92 Pl.
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download 2N2907 Datasheet



2N2907
2N2907
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package.

特征 / Features
低漏电流,低集电极饱和电压
Low Leakage current, Low collector saturation voltage.

用途 / Applications
用于一般放大。
General amplifier.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Collector
PIN 2Base PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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2N2907
2N2907
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
-60
-40
-5.0
-600
625
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-On Time
Turn-Off Time
符号
Symbol
VCBO
测试条件
Test Conditions
IC=-10μA IE=0
最小值 典型值 最大值
Min Typ Max
-60
单位
Unit
V
VCEO IC=-10mA IB=0
-40
V
VEBO
ICBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)(1)
VBE(sat)(2)
fT
Cob
Ton
Toff
IE=-10μA IC=0
VCB=-50V IE=0
VCE=-10V IC=-150mA
VCE=-10V IC=-500mA
VCE=-10V IC=-10mA
VCE=-10V IC=-1.0mA
VCE=-10V IC=-0.1mA
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
VCE=-20V IC=-50mA
f=100MHz
VCB=-10V IE=0
f=1.0MHz
VCC=-30V IC=-150mA
IB1=-15mA
VCC=-6.0V IC=-150mA
IB1=IB2=-15mA
-5.0
100
30
75
50
35
200
-0.02
300
V
μA
-0.4 V
-1.6 V
-1.3 V
-2.6 V
MHz
8.0 pF
0.045 μs
0.1 μs
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