PNP transistor. 2N2907A Datasheet

2N2907A transistor. Datasheet pdf. Equivalent

Part 2N2907A
Description Silicon PNP transistor
Feature .
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download 2N2907A Datasheet



2N2907A
2N2907A
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package.

特征 / Features
低漏电流,低集电极饱和电压
Low Leakage current, Low collector saturation voltage.

用途 / Applications
用于一般放大。
General amplifier.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Collector
PIN 2Base PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions
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2N2907A
2N2907A
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
-60
-60
-5.0
-600
625
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
VCBO
VCEO
VEBO
测试条件
Test Conditions
IC=-10μA IE=0
IC=-10mA IB=0
IE=-10μA IC=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-60 V
-60 V
-5.0 V
Collector Cut-Off Current
ICBO VCB=-50V IE=0
-0.1 μA
hFE(1)* VCE=-10V IC=-150mA 100
300
hFE(2)* VCE=-10V IC=-500mA 50
DC Current Gain
hFE(3) VCE=-10V IC=-10mA 100
hFE(4) VCE=-10V IC=-1.0mA 100
hFE(5) VCE=-10V IC=-0.1mA 75
Collector-Emitter Saturation
Voltage
VCE(sat)(1)*
VCE(sat)(2)*
IC=-150mA
IC=-500mA
IB=-15mA
IB=-50mA
-0.4 V
-1.6 V
Base-Emitter Saturation Voltage
VBE(sat)(1)*
VBE(sat)(2)*
IC=-150mA
IC=-500mA
IB=-15mA
IB=-50mA
Transition Frequency
fT
VCE=-20V IC=-50mA
f=100MHz
Collector Output Capacitance
Cob
VCB=-10V IE=0
f=0.1MHz
VCC=-30V
Turn-On Time
Ton VBE(off)=-1.5V
IC=-150mA IB1=-15mA
Turn-Off Time
Toff
VCC=-30V IC=-150mA
IB1=IB2=-15mA
*Pulse test: pulse width300μs,duty cycle2.0%
*脉冲测试:脉宽≤300μs,占空比≤2.0%
200
-1.3 V
-2.6 V
MHz
30 pF
0.05 μs
0.1 μs
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