2N5089

ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor 2N5086 and 2N5087 are recommended. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Value 35 30 4.5 50 500 150 - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 0.1 mA at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 4.5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter ...