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2N5770 Dataheets PDF



Part Number 2N5770
Manufacturers CDIL
Logo CDIL
Description NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Datasheet 2N5770 Datasheet2N5770 Datasheet (PDF)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package EBC VHF/UHF Amplifier Mixer and Oscillator Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25ºC Derate Above 25ºC PD Power Dissipation@ Tc.

  2N5770   2N5770



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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package EBC VHF/UHF Amplifier Mixer and Oscillator Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25ºC Derate Above 25ºC PD Power Dissipation@ Tc=25ºC Derate Above 25ºC PD Operating And Storage Junction Temperature Range Tj, Tstg VALUE 15 30 4.5 50 350 2.8 850 6.8 - 55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=3mA, IB=0 Collector Base Voltage VCBO IC=10µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut Off Current ICBO VCB=15V, IE = 0 Collector Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA Ba.


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