Document
2SA1300 PNP Silicon Epitaxial Planar Transistor
for strobo flash and medium power amplifier applications.
The transistor is subdivided into three groups, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25oC)
Parameter Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current Power Dissipation Junction Temperature Storage Temperature Range
Pulsed(Note 1) DC
Note 1:Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Symbol -VCBO -VCES -VCEO -VEBO
-ICP -IC -IB Ptot Tj TS
Value 20 20 10 6 5 2 0.2 750 150
-55 to +150
Unit V
V
V A A A mW OC OC
Page 1 of 3
7/15/2011
Characteristics at Tamb=25 OC
Parameter DC Current Gain at -VCE=1V, -IC=0.5A
at -VCE=1V, -IC=4A
Symbol
Y hFE G hFE L hFE
hFE
Collector Cutoff Current at -VCB=20V Emitter Cutoff Current at .