Document
2SC1213 / 2SC1213A
NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications.
The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor 2SA673 and 2SA673A are recommended.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
2SC1213 2SC1213A 2SC1213 2SC1213A
Symbol
VCBO
VCEO VEBO
IC Ptot Tj Tstg
Value 35 50 35 50 4
500
400
150
- 55 to + 150
Unit V
V V mA mW OC OC
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain
at VCE = 3 V, IC = 10 mA
Current Gain Group B
C
D
at VCE = 3 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 20 V
Collector Base Breakdown Voltage
2SC1213
a.