DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC1213
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
...
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC1213
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for low frequency amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating 50 50 4 500 400
+150 -55 to +150
Unit V V V mA
mW oC oC
TO-92
.190(4.83) .170(4.33)
.190(4.83) .170(4.33)
.500 (12.70)
Min
2o Typ 2o Typ
.050 (1.27)Typ
.022(0.56) .014(0.36)
.100 (2.54)
Typ
.022(0.56) .014(0.36)
321
.148(3.76) .132(3.36)
.050 5oTyp. 5oTyp. (1.27)Typ Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO
50
Collector-Emitter Breakdown Voltage
...