2SA719

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA719/2SA720 TRANSISTOR (PNP) TO-92 FEATURES For Low-Frequency Power Amplification and Driver Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage 2SA719 2SA720 Collector-Emitter Voltage 2SA719 2SA720 Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -60 -25 -50 -5 -500 625 150 -55-150 Unit V V V mA mW ℃ ℃ 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage 2SA719 2SA720 Collector-emitter breakdown voltage 2SA719 2SA720 Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2...