ST 2SA952
PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into three group, M, L and K according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 oC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO
-IC -IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 30 25 5 700 150 600 150
-55 to +150
Unit V V V mA mA
mW OC OC
РАДИОТЕХ
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®
ST 2SA952
Characteristics at Tamb=25 oC
DC Current Gain at -VCE=1V, -IC=100mA
Current Gain Group M L K
at -VCE=1V, -IC=700mA Collector Cutoff Current at -VCB=30V Emitter Cutoff Current at -VEB=5V Collector S.