Document
Transistors
2SA0719, 2SA0720 (2SA719, 2SA720)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318
■ Features • Complementary pair with 2SC1317 and 2SC1318
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
2SA0719 2SA0720
VCBO
−30 −60
Collector-emitter voltage 2SA0719 VCEO
(Base open)
2SA0720
−25 −50
Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
VEBO IC ICP PC Tj Tstg
−5 −500
−1 625 150 −55 to +150
Unit V
V
V mA A mW °C °C
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
0.7±0.2 12.9±0.5
0.7±0.1
0.45+–00..115 2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
2.3±0.2
1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ .