ST 2SC5343
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdiv...
ST 2SC5343
NPN Silicon Epitaxial Planar
Transistor for switching and AF amplifier applications.
The
transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25? )
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 60 50 5 150 50 500 125
-55 to +125
Unit V V V mA mA
mW OC OC
РАДИОТЕХ
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®
ST 2SC5343
Characteristics at Tamb=25 OC
DC Current Gain at VCE=6V, IC=1mA Current Gain Group O Y G L at VCE=6V, IC=150mA
Collector Emitter Saturation Voltage at IC=50mA, IB=5mA
Base Emitter Saturation Voltage...
