2SC5345

ST 2SC5345 NPN Silicon Epitaxial Planar Transistor RF amplifier applications. The transistor is subdivided into three groups, R, O and Y. according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25? ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS G S P FORM A IS AVAILABLE Value 30 20 4 20 500 150 -55 to +150 Unit V V V mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® ST 2SC5345 Characteristics at Tamb=25 OC DC Current Gain at VCE=6V, IC=1mA Collector Base Breakdown Voltage at IC=10µA Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown Voltage at IE=10µA Collector Cutoff Current at VCB=30V E...