S9012 Transistors Datasheet

S9012 Datasheet, PDF, Equivalent


Part Number

S9012

Description

PNP Silicon Transistors

Manufacture

MCC

Total Page 1 Pages
Datasheet
Download S9012 Datasheet


S9012
MCC
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
TO-92 Plastic-Encapsulate Transistors
Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55OC to +150OC
Marking Code: S9012
Pin Configuration
C
BE
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0)
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0)
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
40 --- Vdc
25 --- Vdc
5.0 --- Vdc
--- 0.1 uAdc
--- 0.2 uAdc
--- 0.1 uAdc
hFE(1)
DC Current Gain
(IC=50mAdc, VCE=1.0Vdc)
hFE(2)
DC Current Gain
(IC=500mAdc, VCE=1.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
VBE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
VEB Base- Emitter Voltage
(IE=100mAdc)
SMALL-SIGNAL CHARACTERISTICS
64 300 ---
40 --- ---
--- 0.6 Vdc
--- 1.2 Vdc
--- 1.4 Vdc
fT Transistor Frequency
150 --- MHz
(IC=20mAdc, VCE=6.0Vdc, f=30MHz)
CLASSIFICATION OF HFE (1)
Rank
Range
E
78-112
F
96-135
G
112-166
H
144-220
I
190-300
S9012
PNP Silicon
Transistors
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
MM
DIM MIN
A .175
B .175
C .500
D .016
E .135
G .095
MAX
.185
.185
---
.020
.145
.105
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Revision: 2
www.mccsemi.com
This datasheet has been downloaded from http://www.digchip.com at this page
2003/06/30


Features MCC   omponents 20736 M arilla Street Chatsworth    !"# $ %    !"#  Features • TO-92 Plastic-Encapsu late Transistors • Capable of 0.625Wa tts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A • Collector- base Voltage 40V • Operating and stor age junction temperature range: -55OC t o +150OC • Marking Code: S9012 Pin C onfiguration C BE Electrical Character istics @ 25OC Unless Otherwise Specifie d Symbol Parameter OFF CHARACTERISTI CS Min Max Units V(BR)CBO Collector- Base Breakdown Voltage (IC=100uAdc, IE =0) V(BR)CEO Collector-Emitter Breakd own Voltage (IC=0.1mAdc, IB=0) V(BR)E BO Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) ICBO Collector Cutoff Current (VCB=40Vdc, IE=0) ICEO Collec tor Cutoff Current (VCE=20Vdc, IB=0) IEBO Emitter Cutoff Current (VEB=5.0Vd c, IC=0) ON CHARACTERISTICS 40 --- Vd c 25 --- Vdc 5.0 --- Vdc --- 0.1 uAdc - -- 0.2 uAdc --- 0.1 uAdc hFE(1) DC Current Gain (IC=50mAdc, .
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