S9012 Transistor Datasheet

S9012 Datasheet, PDF, Equivalent


Part Number

S9012

Description

PNP Silicon Epitaxial Planar Transistor

Manufacture

GME

Total Page 4 Pages
Datasheet
Download S9012 Datasheet


S9012
PNP Silicon Epitaxial Planar Transistor
FEATURES
z High Collector Current.(IC= -500mA
z Complementary To S9013.
z Excellent HFE Linearity.
Pb
Lead-free
APPLICATIONS
z High Collector Current.
ORDERING INFORMATION
Type No.
Marking
S9012
2T1
Production specification
S9012
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-40
-25
-5
-500
300
-55 to +150
Units
V
V
V
mA
mW
C081
Rev.A
www.gmicroelec.com
1

S9012
Production specification
PNP Silicon Epitaxial Planar Transistor
S9012
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=-100μA,IE=0
IC=-1mA,IB=0
IE=-100μA,IC=0
-40
-25
-5
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
VCB=-40V,IE=0
VCE=-20V,IB=0
VEB=-5V,IC=0
VCE=-1V,IC=-50mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
VCE=-6V, IC= -20mA
f=30MHz
120
150
-0.1
-0.1
-0.1
400
-0.6
-1.2
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
5
UNIT
V
V
V
μA
μA
μA
V
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
MARKING
L
120-200
H
200-350
2T1
J
300-400
C081
Rev.A
www.gmicroelec.com
2


Features PNP Silicon Epitaxial Planar Transistor FEATURES z High Collector Current.(IC= -500mA) z Complementary To S9013. z Excellent HFE Linearity. Pb Lead-free APPLICATIONS z High Collector Current. ORDERING INFORMATION Type No. Marki ng S9012 2T1 Production specificatio n S9012 SOT-23 Package Code SOT-23 MAX IMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value V CBO VCEO VEBO IC PC Tj,Tstg Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junct ion and Storage Temperature -40 -25 -5 -500 300 -55 to +150 Units V V V mA m W ℃ C081 Rev.A www.gmicroelec.com 1 Production specification PNP Silicon Epitaxial Planar Transistor S9012 EL ECTRICAL CHARACTERISTICS @ Ta=25℃ unl ess otherwise specified Parameter Sym bol Test conditions MIN TYP MAX Colle ctor-base breakdown voltage Collector-e mitter breakdown voltage Emitter-base b reakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=-100μA,IE=0 I.
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