S9012

PNP Silicon Epitaxial Planar Transistor FEATURES z High Collector Current.(IC= -500mA） z Complementary To S9013. z Excellent HFE Linearity. Pb Lead-free APPLICATIONS z High Collector Current. ORDERING INFORMATION Type No. Marking S9012 2T1 Production specification S9012 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature -40 -25 -5 -500 300 -55 to +150 Units V V V mA mW ℃ C081 Rev.A www.gmicroelec.com 1 Production specification PNP Silicon Epitaxial Planar Transistor S9012 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=-100μA,IE=0 I...