BC636, BC636-16, BC638, BC640, BC640-16
High Current Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter...
BC636, BC636-16, BC638, BC640, BC640-16
High Current
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC636 BC638 BC640
Collector-Base Voltage
BC636 BC638 BC640
Emitter-Base Voltage
Collector Current — Continuous
www.DataSheet4U.com
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol VCEO
VCBO
VEBO IC PD
PD
TJ, Tstg
Symbol RθJA RθJC
Value
–45 –60 –80
–45 –60 –80 –5.0 –0.5
Unit Vdc
Vdc
Vdc Adc
625 mW 5.0 mW/°C
1.5 12
–55 to +150
Watts mW/°C
°C
Max Unit 200 °C/W
83.3 °C/W
http://onsemi.com
COLLECTOR 2
3 BASE
1 EMITTER
1 23
CASE 29 TO–92
STYLE 14
ORDERING INFORMATION
Device
Package
Shipping
BC636
TO–92
5000 Units/Box
BC636ZL1
TO–92 2000/Ammo Pack
BC636–16ZL1
TO–92 ...